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D. M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, and H. Morkoc, "Si3N4 on GaAs by Direct Electron Cyclotron Resonance Plasma-Assisted Nitridation of Si Layer in Si/GaAs Structure," J. Vac. Sci. Technol. B 16, no. 2 (1998): 507.

David J. Schroeder, Jose Luis Hernandez, Gene D. Berry and Angus A. Rockett, "Hole Transport and Doping States in Epitaxial CuIn1-xGaxSe2," J. Appl. Phys. 83, no. 3 (1998): 1519.

M. Bodegard, K. Granath, L. Stolt, and A. Rockett, "The Behavior of Na Implanted Into Mo Thin Films During Annealing," Solar Energy Mater. and Solar Cells 58, no. 2 (1999): 199-208.

A. Rockett, K. Granath, S. Asher, M. M. Al Jassim, F. Hasoon, R. Matson, B. Basol, V. Kapur, J. S. Britt, T. Gillespie and C. Marshall, "Na Incorporation in Mo and CuInSe2 from Production Processes," Solar Energy Materials and Solar Cells 59, no. 3 (1999): 255-64.

Z. Wang, D. M. Diatezua, D-G. Park, Z. Chen, H. Morkoc, and A. Rockett, "Plasma nitridation of thing Si layers for GaAx dielectrics," J. of Vac. Sci. & Tech. B 17, no. 5 (1999): 2034-9.

A. Rockett, J.S. Britt, T. Gillespie, C. Marshall, M.M. Al Jassim, F. Hasoon, R. Matson, B. Basol, "Na in selenized Cu(In,Ga)Se2 on Na-containing and Na-free glasses: distribution, grain structure, and device performances," Thin Solid Films 372, no. 1-2 (2000): 212-17.

A. Rockett, R. N. Bhattacharya, C. Eberspacher, V. Kapur, and S.H. Wei, "Basic Research Opportunities in Cu-Chalcopyrite Photovoltaics," in Photovoltaics for the 21st Century. Proceedings of the International Symposium. (Electrochem. Soc. Proceedings Vol.99-11). Electrochem. Soc. (1999): 232-40, Pennington, NJ, USA.

D. Liao and A. Rockett, "Epitaxial growth of Cu(In,Ga)Se2 on GaAs(110)," J Appl. Phys 91, no. 4 (2002): 1978-83.

Y.M. Strzhemechny, P.E. Smith, S.T. Bradley, D.X. Liao, A.A. Rockett, K. Ramanathan, and L.J. Brillson, “Near-surface electronic defects and morphology of CuIn 1-xGa xSe2,” J.Vac. Sci. & Tech. B 20, no. 6 (2002): 2441-8.

S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, “Size-dependent detachment-limited decay kinetics of two-dimensional TiN islands on TiN(111),” Phys. Rev. Lett. 89, no. 17 (2002): 176102/1-4.

J.T. Heath, J.D. Cohen, W.N. Shafarman, D.X. Liao, and A.A. Rockett, “Effect of Ga content on defect states in CuIn 1-xGa xSe 2 photovoltaic devices,” Appl. Phys. Lett. 80, no. 24 (2002): 4540-2.

A. Rockett, D. Liao, J.T. Heath, .D. Cohen, Y. M. Strzhemechny, L. J. Brillson, K. Ramanathan, and W.N. Shafarman, “Near-surface Defect Distributions in Cu(In,Ga)Se2,” Thin Solid Films (2002): 431-2, 301-6.

D. Liao and A. Rockett, “Cd-doping at the CuInSe 2/CdS heterojunction,” J. Appl. Phys. 93, no. 11 (2003): 9380-2.

D. Liao and A. Rockett, “Cu depletion at the CuInSe 2 Surface,” Appl. Phys. Lett. 82, no. 17 (2003): 2829-31.

O. Lundberg, J. Lu, A. Rockett, M. Edoff, L. Stolt, “Diffusion of Indium and Gallium in Cu(In,Ga)Se 2 Thin Film Solar Cells,” J. Phys. and Chem. of Solids 64, no. 9,10 (2003): 1499-1504.

A. Rockett, D. Liao, J.T. Heath, J.D. Cohen, Y.M. Strzhemechny, L.J. Brillson, K. Ramanathan, and W.N. Shafarman, “Near-surface Defect Distributions in Cu(In,Ga)Se 2,” Thin Solid Films (2003): 431-2, 301-6.

A. Rockett, DD. Johnson, S.V. Khare, B.R. Tuttle, “Prediction of Dopant Ionization Energies in Silicon: The Importance of Strain,” Phys. Rev. B. 6823, no. 23 (2003): 3208.

A. Rockett, D. Liao, C. Lei, C. Mueller, and I. Robertson, “The Effect of Na in Polycrystalline and Single Crystal CuIn 1-xGa xSe 2,” Thin Solid Films (2005): 480-1, 2-7.

L.C. Yang, G.S. Chen, and A. Rockett, “Surface Polarities of Sputtered Epitaxial CuIn Se2 and Cu1 In3 Se5 Thin Films Grown on GaAs (001) Substrates,” Appl. Phys. Lett. 86, no. 20 (2005): 1-3.